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Diffusivity of Point Defects in the Passive Film on Stainless Steel

Fattah-alhosseini, A ; Alemi, M. H ; Banaei, S ;Ferro, Sergio

International Journal of Electrochemistry, 2011, Vol.2011, 6 pages [Peer Reviewed Journal]

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  • Title:
    Diffusivity of Point Defects in the Passive Film on Stainless Steel
  • Author/Creator: Fattah-alhosseini, A ; Alemi, M. H ; Banaei, S
  • Ferro, Sergio
  • Subjects: Chemistry
  • Is Part Of: International Journal of Electrochemistry, 2011, Vol.2011, 6 pages
  • Description: The semiconductor properties of passive films formed on AISI 316 stainless steel in sulfuric acid solution were studied by employing Mott-Schottky analysis in conjunction with the point defect model. The donor density of the passive films, which can be estimated by the Mott-Schottky plots, changes depending on the film formation potentials. Based on the Mott-Schottky analysis, an exponential relationship between donor density and the film formation potentials of the passive films was developed. The results showed that the donor densities evaluated from Mott-Schottky plots are in the range 2-3 × 10 cm and decreased with the film formation potential. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficient of the donors, (), is calculated to be approximately 3.12 × 10 cm/s.
  • Identifier: E-ISSN: 2090-3537 ; DOI: 10.4061/2011/968512