3 Results for Central Connecticut State University
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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Article
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1.5-V single work-function W/WN/n/sup +/-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAMRengarajan, R ; Boyong He ; Ransom, C ; Chang Ju Choi ; Ramachandran, R ; Haining Yang ; Butt, S ; Halle, S ; Yan, W ; Lee, K ; Chudzik, M ; Robl, W ; Parks, C ; Massey, J.G ; La Rosa, G ; Yujun Li ; Radens, C ; Divakaruni, R ; Crabbe, EIEEE Electron Device Letters, October 2002, Vol.23(10), pp.621-623 [Peer Reviewed Journal]No full-text |
| 2 |
Material Type: Conference Proceeding
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A novel trench DRAM cell with a vertical access transistor and buried strap (VERI BEST) for 4 Gb/16 GbGruening, U ; Radens, C.J ; Mandelman, J.A ; Michaelis, A ; Seitz, M ; Arnold, N ; Lea, D ; Casarotto, D ; Knorr, A ; Halle, S ; Ivers, T.H ; Economikos, L ; Kudelka, S ; Rahn, S ; Tews, H ; Lee, H ; Divakaruni, R ; Welser, J.J ; Furukawa, T ; Kanarsky, T.S ; Alsmeier, J ; Bronner, G.BInternational Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), 1999, pp.25-28No full-text |
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Material Type: Conference Proceeding
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Nitride framed shallow trench isolation (NFSTI) for self-aligned buried strap in high performance trench capacitor DRAM/eDRAMKim, B ; Fukuzaki, Y ; Worth, G ; Nuetzel, J ; Williams, G ; Lee, B ; Takegawa, Y ; Halle, S ; Rupp, T ; Sudo, A ; Divakaruni, R ; Srinivasan, R ; Mii, T ; Bronner, G2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517), 2001, pp.89-92No full-text |
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- Ransom, C (1)
- Li, Yujun (1)
- Massey, J.G (1)
- He, Boyong (1)
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- Yan, W (1)
- Crabbe, E (1)
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- Butt, S (1)
- Ramachandran, R (1)
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- Yang, Haining (1)
- Lee, K (1)
- Chudzik, M (1)
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- 2001 International Symposium on VLSI Technology, Systems, and Applications (1)
- 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) (1)
- Electron Device Letters (IEEE) (1)
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- International Electron Devices Meeting 1999 (1)
- International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1)
- International Symposium on VLSI Technology, Systems, and Applications, Proceedings (1)
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